Method of manufacturing a bipolar semiconductor switch
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Mar 3, 2017
filing date -
Feb 7, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for forming a bipolar semiconductor switch includes providing a semiconductor body which has a main surface, a back surface arranged opposite to the main surface, and a first semiconductor layer, and reducing a charge carrier life-time in the semiconductor body. The charge carrier life-time is reduced by at least one of indiffusing heavy metal into the first semiconductor layer, implanting protons into the first semiconductor layer and implanting helium nuclei into the first semiconductor layer, so that the charge carrier life-time has, in a vertical direction which is substantially orthogonal to the main surface, a minimum in a lower n-type portion of the first semiconductor layer where a concentration of n-type dopants is substantially close to a maximum.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully