Trench insulated gate bipolar transistor and manufacturing method thereof
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Aug 3, 2015
filing date -
Sep 17, 2014
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Abstract
A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches.
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