Method of manufacturing a horizontal gate-all-around transistor having a fin

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United States of America Patent

PATENT NO 9882031
APP PUB NO 20160336430A1
SERIAL NO

15218146

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Abstract

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A semiconductor structure includes a substrate and a fin. The fin extends from the substrate and is formed with a hole therethrough. The hole is defined by a confronting pair of wall parts. One of the wall parts is more arcuate than the other of the wall parts. A method for fabricating the semiconductor structure is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN 6 ROAD HSINCHU SCIENCE PARK HSINCHU ROC 30077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tai, Chia-Cheng Hsinchu, TW 6 11
Tai, Chun-Liang Hsinchu, TW 12 67

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