Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Nov 28, 2016
filing date -
Aug 12, 2015
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Abstract
A method of making a semiconductor device includes forming a fin in a substrate; depositing a first spacer material to form a first spacer around the fin; depositing a second spacer material to form a second spacer over the first spacer; recessing the first spacer and the second spacer; removing the first spacer; and performing an epitaxial growth process to form epitaxial growth on an end of the fin, along a sidewall of the fin, and adjacent to the fin.
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