Thin oxide formation by wet chemical oxidation of semiconductor surface when the one component of the oxide is water soluble
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United States of America Patent
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Jan 30, 2018
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Oct 1, 2015
filing date -
May 30, 2014
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Abstract
A semiconductor device is provided, which comprises a semiconductor structure having a surface, the semiconductor structure comprising a material whose oxide is water soluble; and an oxide layer formed on the surface of the semiconductor structure by a wet chemical oxidation treatment utilizing a solvent mixture that comprises a water soluble substance and an aprotic solvent. The layer of oxide may be as thin as approximately 0.7 nanometers in width or less. The semiconductor structure comprises at least one of Ge, SiGe, and III-V compound semiconductor materials. A solution mixture for oxidizing selective semiconductor materials is also provided, which comprises a solvent mixture that includes: a water soluble oxidizing agent; and an aprotic solvent.
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