Silicon carbide substrate and method for producing silicon carbide substrate
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United States of America Patent
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Jan 30, 2018
Grant Date -
Nov 24, 2016
app pub date -
May 12, 2016
filing date -
May 19, 2015
priority date (Note) -
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Abstract
A silicon carbide substrate includes a Si substrate (silicon substrate), a SiC base film (silicon carbide base film) which is stacked on the Si substrate and contains silicon carbide, a defective part (through-hole) which passes through the SiC base film, a hole which is located between the Si substrate and the SiC base film corresponding to the defective part, and an oxide film which is provided on the surface of the Si substrate in the hole and contains silicon oxide. Further, on the SiC base film, a SiC grown layer (silicon carbide grown layer) may be formed.
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