Semiconductor device having asymmetrical source/drain
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Feb 2, 2017
filing date -
Apr 23, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully