FinFET with an asymmetric source/drain structure and method of making same
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United States of America Patent
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Jan 30, 2018
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app pub date -
Jan 4, 2016
filing date -
Mar 8, 2013
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Abstract
Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor device comprising a first semiconductor fin extending above a substrate, a first source region on the first semiconductor fin, and a first drain region on the first semiconductor fin. The first source region has a first width and the first drain region has a second width with the second width being different than the first width.
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