Semiconductor integrated circuit device having with a reservoir capacitor
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Jul 18, 2017
filing date -
Nov 16, 2015
priority date (Note) -
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Abstract
A semiconductor integrated circuit device may include a through silicon via (TSV), a keep out zone and a plurality of dummy patterns. The TSV may be arranged in a selection region of a semiconductor substrate. The keep out zone may be configured to define a peripheral region of the TSV. The dummy patterns may be arranged in the keep out zone to receive a conductive signal. The dummy patterns may function as an electrode of a reservoir capacitor.
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