Preventing strained fin relaxation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9881937
SERIAL NO

15397170

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Abstract

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A semiconductor structure includes a first strained fin portion and a second strained fin portion, a pair of inactive inner gate structures upon respective strained fin portions, and spacers upon outer sidewalls surfaces of the inactive inner gate structures, upon the inner sidewall surfaces of the inactive inner gate structures, and upon the first strained fin portion and the second strained fin portion end surfaces. The first strained fin portion and the second strained fin portion end surfaces are coplanar with respective inner sidewall surfaces of the inactive inner gate structures. The spacer formed upon the end surfaces limits relaxation of the first strained fin portion and the second strained fin portion and limits shorting between the first strained fin portion and the second strained fin portion.

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Patent Owner(s)

Patent OwnerAddress
ELPIS TECHNOLOGIES INC1891 ROBERSTON ROAD SUITE 100 OTTAWA K2H 5B7

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3099 32749
Doris, Bruce B Slingerlands, US 797 13759
He, Hong Schenectady, US 1408 9557
Kanakasabapathy, Sivananda K Niskayuna, US 196 2358
Karve, Gauri Cohoes, US 75 245
Li, Juntao Cohoes, US 613 3837
Lie, Fee Li Albany, US 189 1117
Liu, Derrick Albany, US 30 139
Yeung, Chun Wing Niskayuna, US 45 210

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