Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
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United States of America Patent
Stats
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Jan 30, 2018
Issued Date -
N/A
app pub date -
Sep 24, 2014
filing date -
Jul 6, 2009
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.
First Claim
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International Classification(s)
- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 30, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 30, 2029 |
