Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
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United States of America Patent
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Jan 30, 2018
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app pub date -
Sep 24, 2014
filing date -
Jul 6, 2009
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Abstract
Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.
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