Method for producing one-time-programmable memory cells and corresponding integrated circuit
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United States of America Patent
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Jan 30, 2018
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app pub date -
Jan 24, 2017
filing date -
May 19, 2015
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Abstract
An integrated circuit includes a silicon-on-insulator substrate that includes a semiconductor film located above a buried insulating layer. A first electrode of a silicide material overlies the semiconductor film. A sidewall insulating material is disposed along sidewalls of the first electrode. A dielectric layer is located between the first electrode and the semiconductor film. A second electrode includes a silicided zone of the semiconductor film, which is located alongside the sidewall insulating material and extends at least partially under the dielectric layer and the first electrode. The first electrode, the dielectric layer and the second electrode form a capacitor that is part of a circuit of the integrated circuit.
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