CMOS-compatible polycide fuse structure and method of fabricating same

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United States of America Patent

PATENT NO 9881927
SERIAL NO

14780222

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CMOS-compatible polycide fuse structures and methods of fabricating CMOS-compatible polycide fuse structures are described. In an example, a semiconductor structure includes a substrate. A polycide fuse structure is disposed above the substrate and includes silicon and a metal. A metal oxide semiconductor (MOS) transistor structure is disposed above the substrate and includes a metal gate electrode.

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  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hafez, Walid M Portland, US 173 1300
Jan, Chia-Hong Portland, US 160 3310
Park, Joodong Portland, US 47 704
Yeh, Jeng-Ya D Portland, US 22 214

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