Static random access memory (SRAM) density scaling by using middle of line (MOL) flow
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United States of America Patent
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Jan 30, 2018
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app pub date -
Oct 24, 2016
filing date -
Oct 24, 2016
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Abstract
A method is presented for forming a semiconductor structure. The method includes forming gate contacts on a semiconductor substrate, forming trench silicide (TS) contacts on the semiconductor substrate, recessing the TS contacts to form a gap region, filling the gap region of the recessed TS contacts with a dielectric, selectively etching the gate contacts to form a first conducting layer, and selectively etching the TS contacts to form a second conducting layer.
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