Semiconductor device
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United States of America Patent
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Jan 30, 2018
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app pub date -
Oct 27, 2016
filing date -
Oct 24, 2014
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Abstract
To improve a tradeoff between ON voltage and ON/OFF loss while maintaining short-circuit tolerance, provided is a semiconductor device including an IGBT element; a super junction transistor element connected in parallel with the IGBT element; and a limiting section that limits a voltage applied to a gate terminal of the IGBT element more than a voltage applied to a gate terminal of the super junction transistor element.
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