Semiconductor device structure and method for forming the same

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United States of America Patent

PATENT NO 9881884
SERIAL NO

14933619

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor substrate having a first surface, a second surface, and a recess. The second surface is opposite to the first surface. The recess passes through the first semiconductor substrate. The semiconductor device structure includes a first wiring layer over the second surface. The semiconductor device structure includes a first bonding pad in the recess and extending to the first wiring layer so as to be electrically connected to the first wiring layer. The semiconductor device structure includes a nickel layer over the first bonding pad. The semiconductor device structure includes a gold layer over the nickel layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Sin-Yao Tainan, TW 27 143
Hung, Feng-Chi Chu-Bei, TW 158 1155
Wang, Ching-Chun Tainan, TW 141 1241
Yang, Ming-Hsien Taichung, TW 29 118
Yaung, Dun-Nian Taipei, TW 608 6886

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