Power semiconductor module
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Mar 3, 2017
filing date -
Mar 18, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully