Method for fabricating a local interconnect in a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Jan 15, 2016
filing date -
Jan 15, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a first transistor having a first gate, a first source and a first drain, a second transistor having a second gate, a second source and a second drain, an isolation region separating the first transistor from the second transistor, and a local interconnect connecting at least one of the first source and the first drain to at least the second source and the second drain. The local interconnect is in contact with a surface of the at least one of the first source and the first drain, a surface of the at least the second source and the second drain and a surface of a part of the isolation region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully