Middle of the line integrated efuse in trench EPI structure
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United States of America Patent
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Jan 30, 2018
Issued Date -
N/A
app pub date -
Dec 1, 2016
filing date -
Dec 15, 2015
priority date (Note) -
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Abstract
A fuse includes a semiconductor layer having a dielectric material formed thereon. An epitaxially grown material is formed in a trench within the dielectric material. The epitaxially grown material includes a peak region. A fuse metal is formed over the peak region and extends along sidewalls of the trench and over the dielectric material outside the trench. Contacts are formed outside the trench connecting to fuse metal over the dielectric material.
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