Semiconductor device and method for producing semiconductor device

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United States of America Patent

PATENT NO 9881851
SERIAL NO

15062002

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Abstract

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A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Uchida, Kengo Kanagawa, JP 29 29

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