Wimpy and nominal semiconductor device structures for vertical finFETs
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Mar 23, 2017
filing date -
Mar 23, 2017
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Abstract
A first and second vertical fin are formed on a substrate structure. A dielectric layer is disposed on the substrate structure and the first and second vertical fins. A work function metal (WFM) layer is disposed on the dielectric layer. A first sidewall spacer and a second sidewall space are formed proximate to the first vertical fin and the second vertical fin, respectively. A lithographic mask is applied to a first area proximate to the first vertical fin including the first vertical fin, and a portion of the WFM layer proximate to the first vertical fin. A portion of the WFM layer proximate to the second sidewall spacer is recessed below an upper surface of the second sidewall spacer. The lithographic mask is removed. A portion of the dielectric layer is removed to produce a wimpy vertical transport device and a nominal vertical transport device on the substrate structure.
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