Method of fabricating gate electrode using a treated hard mask
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Jun 9, 2011
filing date -
Jun 9, 2011
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Abstract
A hard mask layer with a limited thickness is formed over a gate electrode layer. A treatment is provided on the hard mask layer to transform the hard mask layer to be more resistant to wet etching solution. A patterning is provided on the treated hard mask layer and the gate electrode to from a gate structure.
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