Semiconductor devices having multiple gate structures and methods of manufacturing such devices
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United States of America Patent
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Jan 30, 2018
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app pub date -
Jan 24, 2017
filing date -
May 21, 2015
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Abstract
A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.
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