Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same

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United States of America Patent

PATENT NO 9881837
SERIAL NO

14636766

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Abstract

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A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kung, Wei-Chang Hsinchu, TW 8 42
Liang, Min-Chang Zhu-Dong Town, TW 43 221
Wu, Shien-Yang Jhudong Town, TW 50 484

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