Contact openings and methods forming same
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United States of America Patent
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Jan 30, 2018
Issued Date -
N/A
app pub date -
Mar 17, 2017
filing date -
Nov 29, 2016
priority date (Note) -
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Abstract
A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.
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