Method for fabricating semiconductor device including fin shaped structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9881831
SERIAL NO

15465606

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Chung-Yi Tainan, TW 75 269
Hong, Shih-Fang Tainan, TW 29 217
Lin, Chao-Hung Changhua County, TW 72 364

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 30, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 30, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00