Electrically insulated fin structure(s) with alternative channel materials and fabrication methods
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Jan 6, 2015
filing date -
Jan 6, 2015
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Abstract
Semiconductor structures and fabrication methods are provided which includes, for instance, fabricating a semiconductor fin structure by: providing a fin structure extending above a substrate, the fin structure including a first fin portion, a second fin portion disposed over the first fin portion, and an interface between the first and the second fin portions, where the first fin portion and the second fin portion are lattice mismatched within the fin structure; and modifying, in part, the fin structure to obtain a modified fin structure, the modifying including selectively oxidizing the interface to form an isolation region within the modified fin structure, where the isolation region electrically insulates the first fin portion from the second fin portion, while maintaining structural stability of the modified fin structure.
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