Method for manufacturing semiconductor device
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United States of America Patent
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Jan 30, 2018
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Sep 19, 2014
filing date -
Sep 19, 2014
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Abstract
A method for manufacturing a semiconductor device, includes: a preparation step, a flow step, and a processing step. The preparation step prepares an etching solution by dissolving titanium in an ammonia-hydrogen peroxide solution in advance before use of the ammonia-hydrogen peroxide solution for etching. The flow step flows the etching solution after the preparation step so that a concentration of the etching solution in a processing bath is constant. The processing step etches a metal film on a semiconductor wafer with the etching solution by putting in the processing bath the semiconductor wafer having a resist film and the metal film after the flow step is started. The metal film is preferably formed of titanium, and a temperature of the etching solution is preferably adjusted by flowing the etching solution so that the etching solution flows via a temperature controller.
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