Method and system for high precision etching of substrates
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2018
Issued Date -
N/A
app pub date -
Jan 26, 2016
filing date -
Jan 26, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma chamber that may generate plasma to remove monolayer(s) of the substrate. The plasma process may include a two-step process that uses a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transitions to a second plasma or moves the substrate to a different location within the first plasma that has a higher ion energy. In one specific embodiment, the transition between the first and second plasma may be enabled by changing the position of the substrate relative to the source electrode with no or relatively small changes in plasma process conditions.
First Claim
Other Claims data not available
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01J Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 30, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 30, 2029 |
