Metal cap integration by local alloying

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United States of America Patent

PATENT NO 9881798
SERIAL NO

15215544

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Abstract

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A middle-of-line interconnect structure including copper interconnects and integral copper alloy caps provides effective electromigration resistance. A metal cap layer is deposited on the top surfaces of the interconnects. A post-deposition anneal causes formation of the copper alloy caps from the interconnects and the metal cap layer. Selective removal of unalloyed metal cap layer material provides an interconnect structure free of metal residue on the dielectric material layer separating the interconnects.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adusumilli, Praneet Albany, US 166 950
Reznicek, Alexander Troy, US 1451 12717
van, der Straten Oscar Guilderland Center, US 196 1021
Yang, Chih-Chao Glenmont, US 1081 8220

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