Method of fabricating semiconductors
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Oct 7, 2016
filing date -
Nov 25, 2015
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Abstract
A method of manufacturing a semiconductor includes applying a planarization material to a substrate and forming an opening in the planarization material. The opening is filled with polysilicon. A plurality of etching modulation sequences are applied to the substrate, each of the etching modulation sequences including: applying a first etching process to the substrate, wherein the first etching process is more selective to polysilicon than the planarization material; and applying a second etching process to the substrate, wherein the second etching process is more selective to the planarization material than the polysilicon.
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