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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
KOREA ELECTRONICS TECHNOLOGY INSTITUTE	25 SAENARI-RO BUNDANG-GU SEONGNAM-SI GYEONGGI-DO 13509 13509
CHUNG-ANG UNIVERSITY INDUSTRY-ACADEMY COOPERATION FOUNDATION	(HEUKSEOK-DONG) 84 HEUKSEOK-RO DONGJAK-GU SEOUL 06974

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Kim, Ji Wan	Seongnam-si, KR	51	391
Kim, Yong Hoon	Seongnam-si, KR	83	504
Oh, Min Suk	Seoul, KR	9	37
Park, Sung Kyu	Anyang-si, KR	14	113

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
7.5 Year Payment	$3600.00	$1800.00	$900.00	Jul 30, 2025
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Jul 30, 2029

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 30, 2018	US,9881791,B2   US9881791B2	GRANTED PATENT AS SECOND PUBLICATION
May 07, 2015	US,20150123115,A1   US20150123115A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 9881791

Method for producing an oxide film using a low temperature process, an oxide film and an electronic device thereof

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