Method of preventing charge accumulation in manufacture of semiconductor device
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United States of America Patent
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Jan 30, 2018
Grant Date -
Feb 27, 2014
app pub date -
Mar 4, 2013
filing date -
Aug 21, 2012
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Abstract
A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers.
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