Method for processing semiconductor wafer
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United States of America Patent
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Jan 30, 2018
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app pub date -
Feb 4, 2014
filing date -
Feb 19, 2013
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Abstract
In a wafer processing method by which, by using, as a reference surface, a flat surface obtained by applying a curable material to the whole of one surface of a wafer obtained by slicing a semiconductor single-crystal ingot by using a wire saw apparatus, surface grinding is performed on the other surface of the wafer and surface grinding is performed on the one surface of the wafer by using the other surface of the wafer subjected to surface grinding as a reference surface, both surfaces of the wafer are planarized at the same time immediately after the wafer is obtained by slicing.
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