Copper indium gallium selenide (CIGS) thin films with composition controlled by co-sputtering

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United States of America Patent

PATENT NO 9881774
SERIAL NO

14549778

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Abstract

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A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

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Patent Owner(s)

Patent OwnerAddress
SUNLIGHT AEROSPACE INC2045 LINCOLN HIGHWAY SUITE ONE WEST EDISON NJ 08817

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aggarwal, Ishwar D Charlotte, US 136 1079
Bekele, Robel Y Washington, US 22 49
Bruce, Allan J Scotch Plains, US 38 1352
Cyrus, Michael Summit, US 79 1997
Frantz, Jesse A Landover, US 57 80
Frolov, Sergey V Murray Hill, US 40 1214
Nguyen, Vinh Q Fairfax, US 36 139
Sanghera, Jasbinder S Ashburn, US 193 1039

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