Self-latch sense timing in a one-time-programmable memory architecture
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United States of America Patent
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Jan 30, 2018
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app pub date -
Aug 25, 2016
filing date -
Dec 18, 2015
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Abstract
A programmable memory including a self-latching read data path. A sense amplifier senses the voltage level at a bit line, the bit line communicating the data state of a selected memory cell in its associated column. A data latch coupled to the output of the sense amplifier passes the sensed data state. Set-reset logic is provided that receives the output of the data latch in the read data path and, in response to a transition of the data state in a read cycle, latches the data latch and isolates it from the sense amplifier. The set-reset logic resets the data latch at the start of the next read cycle. In some embodiments, a timer is provided so that the latch is reset after a time-out period in a long read cycle in which no data transition occurs.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TEXAS INSTRUMENTS INCORPORATED | 12500 TI BOULEVARD MS 3999 DALLAS TX 75243 |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Davis, Harold L | The Colony, US | 12 | 77 |
Qiu, Yunchen | Plano, US | 10 | 40 |
Toops, David J | Lucas, US | 16 | 67 |
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