Sense amplifier with program biasing and fast sensing
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United States of America Patent
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Jan 30, 2018
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app pub date -
Oct 11, 2016
filing date -
Oct 11, 2016
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Abstract
Apparatuses, systems, and methods are disclosed for accessing non-volatile memory. A bit line is coupled to storage cells for a non-volatile memory element. A sense amplifier is coupled to a bit line. A sense amplifier includes a sense circuit and a bias circuit. A sense circuit senses an electrical property of a bit line for reading data from one or more storage cells, and a bias circuit applies a bias voltage to the bit line for writing data to one or more storage cells. A bias circuit and a sense circuit comprise separate parallel electrical paths within a sense amplifier.
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