Resistive memory apparatus and voltage generating circuit therefor

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United States of America Patent

PATENT NO 9881672
APP PUB NO 20170243641A1
SERIAL NO

15236593

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Abstract

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A resistive memory apparatus may include a memory region including a plurality of resistive memory cells arranged in a plurality of memory cell pairs. The resistive memory apparatus may include a voltage generating circuit configured to generate a read voltage code based on a switching state of at least one memory cell pair. The resistive memory apparatus may include a voltage providing unit configured to generate a read voltage corresponding to the read voltage code.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Tae Ho Icheon-si, KR 264 1802

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