Charge mirror-based sensing for ferroelectric memory
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United States of America Patent
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Jan 30, 2018
Issued Date -
N/A
app pub date -
Jun 3, 2016
filing date -
Jun 3, 2016
priority date (Note) -
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Abstract
Methods, systems, and devices for a sensing scheme that extracts the full or nearly full remnant polarization charge difference between two logic states of a ferroelectric memory cell or cells is described. The scheme employs a charge mirror to extract the full charge difference between the two states of a selected memory cell. The charge mirror may transfer the memory cell polarization charge to an amplification capacitor. The signal on the amplification capacitor may then be compared with a reference voltage to detect the logic state of the memory cell.
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Patent Citation Ranking
- 2 Citation Count
- G11C Class
- 17.97 % this patent is cited more than
- 7 Age
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