Magnetic memory

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United States of America Patent

PATENT NO 9881660
SERIAL NO

15267974

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Abstract

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A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1050023 ?1050023

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Buyandalai, Altansargai Kawasaki, JP 19 150
Daibou, Tadaomi Yokohama, JP 77 1608
Inokuchi, Tomoaki Yokohama, JP 113 1259
Kamiguchi, Yuuzo Yokohama, JP 41 608
Ohsawa, Yuichi Yokohama, JP 117 2845
Shimomura, Naoharu Meguro, JP 67 826
Shirotori, Satoshi Yokohama, JP 129 1008
Yoda, Hiroaki Kawasaki, JP 264 5791

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