Memory circuit having data lines selectively coupled to a sense amplifier and method for operating the same

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United States of America Patent

PATENT NO 9881655
SERIAL NO

14929511

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Abstract

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A memory circuit includes a memory cell, a first bit line, a first bit line bar, a sense amplifier, a first switch and a second switch. The memory cell is coupled with a first bit line having a first bit line portion and a second bit line portion. The first bit line bar has a first bit line bar portion and a second bit line bar portion. The sense amplifier includes a read/write circuit configured to couple the second bit line portion to a global bit line. The first switch is coupled between the first bit line bar portion and the second bit line bar portion. The second switch is coupled between the first bit line portion and the second bit line portion.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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  • 2015 Application Filing Year
  • G11C Class
  • 4029 Applications Filed
  • 3679 Patents Issued To-Date
  • 91.32 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2015201620172018201920202021202220230255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Katoch, Atul Kanata, CA 106 412

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Patent Citation Ranking

  • 1 Citation Count
  • G11C Class
  • 17.97 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges5341973257985222137251801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0100200300400500600700800900100011001200130014001500160017001800190020002100

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