Composition for forming a coating type silicon-containing film, substrate, and patterning process

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United States of America Patent

PATENT NO 9880470
SERIAL NO

14855772

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A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTDTOKYO TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kikuchi, Rie Jyoetsu, JP 12 106
Ogihara, Tsutomu Jyoetsu, JP 204 2124
Tachibana, Seiichiro Jyoetsu, JP 120 1300
Taneda, Yoshinori Jyoetsu, JP 18 192

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