Enhanced EUV lithography system

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United States of America Patent

PATENT NO 9880460
SERIAL NO

15211229

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Abstract

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The present disclosure provides a semiconductor lithography system. The lithography system includes a projection optics component. The projection optics component includes a curved aperture. The lithography system includes a photo mask positioned over the projection optics component. The photo mask contains a plurality of elongate semiconductor patterns. The semiconductor patterns each point in a direction substantially perpendicular to the curved aperture of the projection optics component. The present disclosure also provides a method. The method includes receiving a design layout for a semiconductor device. The design layout contains a plurality of semiconductor patterns each oriented in a given direction. The method includes transforming the design layout into a mask layout. The semiconductor patterns in the mask layout are oriented in a plurality of different directions as a function of their respective location.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Hsu Xinzhuang, TW 18 383
Cheng, Nian-Fuh Hsinchu, TW 13 232
Chou, Chih-Shiang Pingzhen, TW 13 105
Huang, Wen-Chun Tainan, TW 100 1779
Liu, Ru-Gun Zhubei, TW 404 6961

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