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United States of America Patent

PATENT NO 9880437
SERIAL NO

14551914

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

International Classification(s)

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  • 2014 Application Filing Year
  • H01L Class
  • 23828 Applications Filed
  • 21803 Patents Issued To-Date
  • 91.51 % Issued To-Date

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kusunoki, Koji Kawasaki, JP 246 1224
Miyake, Hiroyuki Atsugi, JP 617 12888

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Patent Citation Ranking

  • 6 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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