Measurement of bonding resistances
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United States of America Patent
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Jan 30, 2018
Issued Date -
N/A
app pub date -
Dec 30, 2014
filing date -
Jan 10, 2014
priority date (Note) -
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Abstract
Disclosed is a method for determining a contact resistance of an H bridge including four transistors, each transistor having a point of connection to two neighboring transistors, a bond being produced in each case between a connection point lying between two transistors and an access terminal. The method includes: acting on the open/closed state of the transistors of the bridge so that the transistors on either side of the connection point corresponding to the access terminal are open; applying a determined voltage to an access terminal; determining the current flowing through the bond corresponding to the access terminal; grounding an access terminal neighboring the access terminal if this neighboring access terminal is not already connected to ground; and measuring the voltage at the other neighboring access terminal.
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