Testing TSV with current/voltage source, resistor, comparator, and scan cell
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Jun 8, 2016
filing date -
Mar 20, 2012
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Abstract
This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.
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