Semiconductor device and method for manufacturing the semiconductor device
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Feb 13, 2015
filing date -
Mar 17, 2014
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Abstract
Current detection circuit of a semiconductor device provided with a shunt resistor, a voltage division ratio adjustment resistor and a selection circuit which selects a voltage division ratio of the latter and has enhancement type MOSFETs and Zener Zaps as trimming elements. One of the Zener Zaps is trimmed and a divided voltage of the voltage division ratio adjustment resistor connected in parallel with the shunt resistor is outputted. The detected voltage in which variation of the resistance of the shunt resistor has been cancelled is therefore outputted. As the shunt resistor and the voltage division ratio adjustment resistor are laminated together, it is possible to obtain a current detection circuit with a small area, which can detect a current flowing into a shunt resistor with high accuracy.
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