Silicon carbide semiconductor film-forming apparatus and film-forming method using the same
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United States of America Patent
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Jan 30, 2018
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Jun 19, 2014
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Jun 21, 2013
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Abstract
In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.
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