Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

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United States of America Patent

PATENT NO 9879341
APP PUB NO 20160372351A1
SERIAL NO

15188103

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Abstract

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Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

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APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Ashutosh Jaipur, IN 55 517
Goel, Ashish Bangalore, IN 72 890
Jadhav, Deepak Hubli, IN 13 530
Parihar, Vijay Fremont, US 37 6368
Ping, Er-Xuan Fremont, US 224 3186
Singh, Kaushal K Santa Clara, US 42 4878
Thakur, Randhir P S Fremont, US 241 5412

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