RRAM devices and methods
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Jun 12, 2015
filing date -
Jun 12, 2015
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Abstract
The present disclosure relates to integrated circuits having a resistive random access memory (RRAM) cell, and associated methods of forming such RRAM cells. In some embodiments, the RRAM cell includes a bottom electrode and a top electrode which are separated from one another by an RRAM dielectric. A bottom electrode sidewall and a top electrode sidewall are vertically aligned to one another, and an RRAM dielectric sidewall is recessed back from the bottom electrode sidewall and the top electrode sidewall.
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